| PART |
Description |
Maker |
| EMA6DXV5T5 EMA6DXV5T1 EMA6DXV5T1/D |
Dual Common Emitter Bipolar Resistor Transistor
Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP
Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ON Semiconductor
http://
|
| 1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor
|
GHz Technology
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| NTE916 |
Integrated Circuit High Current, NPN Transistor Array, Common Emitter
|
NTE[NTE Electronics]
|
| AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones
4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| BF599 Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| MRF517 |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
|
Microsemi, Corp.
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
